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王越

2016-07-09 文字:  点击:[]

 

          王越

                 副研究员,研究生导师

                澳门第一娱乐娱城官网

                呼和浩特 010021

                Email:m05wangy@163.com

 

 

 

 

个人简历

一、教育经历:

2009/09-2013/06,北京科技大学,数理学院应用物理系,学士

2013/09-2018/06,中国科学院大学,物理研究所,博士

二、工作经历:

2018/07-至今,澳门第一娱乐娱城官网,澳门第一娱乐娱城官网,副研究员

教学情况

本科生课程:“大学物理C”、“大学物理实验”

研究生培养情况

每年计划招收2-3名硕士生

研究领域

一、磁性功能材料; 二维材料; 拓扑绝缘体材料; 自旋电子学;光电功能材料与器件;第一性原理计算

二、主持或参加科研项目:

1.澳门第一娱乐娱城官网2018引进高层次人才项目,21200-5185125,2018/11-2020/11,200万,在研,主持

2.国家自然科学基金面上项目,11574374,铁磁Heusler合金非均质结构增强反常霍尔效应及各向异性磁电阻,2016/01-2019/12,87万元,在研,参加

3.国际(地区)合作与交流项目,51561145003,兼具垂直各向异性和半金属性能Heusler/MgO复合磁性薄膜材料的制备、界面原子修饰和自旋注入研究,2015/10-2018/09,238万元,已结题,参加

4.国家自然科学基金青年基金,11904185 ,抗坏血酸调控二氧化钒金属-绝缘体相变温度机理及其应用研究, 2020/01-2022/12, 25万元, 在研,主持

发表论著

 

1. Bingchao Yang#, Bensong Wan#, Qionghua Zhou#, Yue Wang#, et al. Te-doped black phosphorus field-effect transistors, Advanced Materials, 2016, 28: 94089415.(共同一作, SCI IF=19.979

2. Xiaoming Zhang#, Zhipeng Hou#, YueWang#, et al. NMR Evidence for the Topologically Nontrivial Nature in a Family of Half-Heusler Compounds, Scientific Reports, 2016, 6: 23172.(共同一作, SCI IF=4.259

3. Yue Wang, Guizhou Xu, Zhipeng Hou, et al. Large Anisotropic Thermal Transport Properties Observed in Bulk Single Crystal Black Phosphorus, Applied Physics Letters, 2016, 108: 092102. SCI IF=3.411

4. Yue Wang, Bingchao Yang, Bensong Wan, et al. Degradation of Black Phosphorus: A Real-Time 31P NMR Study, 2D Materials, 2016, 3: 035025.SCI IF=6.937 

5. Yue Wang, Xuekui Xi*, Zefang Li, et al. Dynamic signature of orbital selective Mott transition in the metallic phase of VO2, New Journal of Physics, 2018, 20: 073026.SCI IF=3.579

6. Yue Wang, Xiaoming Zhang, Bei Ding, et al. Magnetic semiconductors based on quaternary Heusler compounds, Computational Materials Science 2018, 150, 321-324 (SCI IF=2.292)

7. Zhipeng Hou, Yue Wang, Guizhou Xu, et al. Transition from semiconducting to metallic-like conducting and weak antilocalization effect in single crystals of LuPtSb, Applied Physics Letters, 2015, 106(10):102102.SCI IF=3.411

8. Zhipeng Hou, Yue Wang, Enke Liu, et al. Large low-field positive magnetoresistance in nonmagnetic half-Heusler ScPtBi single crystal, Applied Physics Letters, 2015, 107(20):202103.SCI IF=3.411

9. Zhipeng Hou, Bingchao Yang, Yue Wang, et al. Large and Anisotropic Linear Magnetoresistance in Single Crystals of Black Phosphorus Arising From Mobility Fluctuations. Scientific Reports, 2016, 6:23807. (SCI IF=4.259

10. Wenhong Wang*, Ying Zhang*, Guizhou Xu, Licong Peng, Bei Ding, Yue Wang, et al. A Centrosymmetric Hexagonal Magnet with Superstable Biskyrmion Magnetic Nanodomains in a Wide Temperature Range of 100-340 K, Advanced Materials, 2016, 28(32): 6887. (SCI IF=19.979

11. Jianxin Shen, Dashan Shang*, Yisheng Chai, Yue Wang, et al. Nonvolatile Multilevel Memory and Boolean Logic Gates Based on a Single Ni/[Pb(Mg1/3Nb2/3)O3]0.7[PbTiO3]0.3/Ni Heterostructure, Physical Review Applied, 2016, 6(6): 064028. (SCI IF=4.782)

12. Bei Ding, Yueqing Li, Guizhou Xu, Yue Wang, et al. Large topological Hall effect in nonchiral hexagonal MnNiGa films, Applied Physics Letters, 2017, 110(9):092404. SCI IF=3.411

13. Guizhou Xu, Zhipeng Hou, Yue Wang, et al. Angle-dependent magnetoresistance and quantum oscillations in high-mobility semimetal LuPtBi, Journal of Physics: Condensed Matter, 2017, 29(19):195501.SCI IF=2.617

14. Zhipeng Hou#, Weijun Ren#, Bei Ding#, Guizhou Xu, Yue Wang, et al. Observation of Various and Spontaneous Magnetic Skyrmionic Bubbles at Room Temperature in a Frustrated Kagome Magnet with Uniaxial Magnetic Anisotropy, Advanced Materials, 2018, 30(7):1706306.(SCI IF=19.979

15. Zhipeng Hou#, Qiang Zhang#, Guizhou Xu#, Chen Gong, Bei Ding, Yue Wang, et al. Creation of Single Chain of Nanoscale Skyrmion Bubbles with Record-high Temperature Stability in a Geometrically Confined Nanostripe[J]. Nano Letters, 2018,18(2):1274-1279.(SCI IF=12.080

16. Bensong Wan, Zhou Qionghua, Junying Zhang, Yue Wang , et al.  Enhanced Stability of Black Phosphorus Field-Effect Transistors via Hydrogen Treatment, Advanced Electronic Materials, 2018, 4(2):1700455. (SCI IF=5.466

 

 

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